PART |
Description |
Maker |
CY7C1387F-167BGC CY7C1387F-167BGI CY7C1387F-167BGX |
Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics. 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 18兆位(为512k × 36 / 1兆位× 18)流水线双氰胺同步静态存储器
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Cypress Semiconductor Corp.
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CY7C1334H-133AXC CY7C1334H-133AXI CY7C1334H-166AXC |
2-Mbit (64K x 32) Pipelined SRAM with NoBL?/a> Architecture 2-Mbit (64K x 32) Pipelined SRAM with NoBLArchitecture 2-Mbit (64K x 32) Pipelined SRAM with NoBL Architecture 2-Mbit (64K x 32) Pipelined SRAM with NoBL⑩ Architecture
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Cypress Semiconductor Corp.
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CY7C1386D-250AXC ICY7C1387D-167BGI ICY7C1387D-167B |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
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SST30VR021 SST30VR021-500-C-U1 SST30VR021-500-C-WH |
2 Mbit ROM SRAM T1/E1 Transformer 2 Mbit ROM 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo SPECIALTY MEMORY CIRCUIT, PDSO32 2 Mbit ROM 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo SPECIALTY MEMORY CIRCUIT, UUC 2 Mbit ROM 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo 2兆光兆位/ 2Mbit 256千位的SRAM ROM / RAM内存组合
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Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
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CY7C1305BV25 CY7C1305BV25-100BZC CY7C1305BV25-167B |
18-Mbit Burst of 4 Pipelined SRAM with QD(TM) Architecture 18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture From old datasheet system
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CYPRESS[Cypress Semiconductor]
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CY7C1354CV25-225AXI CY7C1354CV25-167AXI CY7C1356CV |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture 9兆位56 × 36/512K × 18)流水线的SRAM的总线延迟TM架构 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture 9兆位56 × 36/512K × 18)流水线的SRAM的总线延迟,TM架构
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Cypress Semiconductor Corp.
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S79FL256S |
256 Mbit (32 MB)/512 Mbit (64 MB), 3 V, Dual-Quad SPI Flash
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Cypress Semiconductor
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M58PV001LE96ZB5 M58PR001LE M58PR001LE96ZB5 M58PR25 |
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
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STMicroelectronics
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M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
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STMicroelectronics
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BBF2805SE BBF2815S BBF2812S BBF2805SK BBF2803SH BB |
3.3V, 20W DC-DC converter 15V, 20W DC-DC converter 12V, 20W DC-DC converter Analog IC 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 18-Mbit QDR-II SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 20W DC-DC Converter(输出功率20WDC-DC转换
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M.S. Kennedy Corp. M.S. Kennedy Corporation
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CY7C1304CV25-100BZC CY7C1304CV25-167BZC CY7C1304CV |
9-Mbit Burst of 4 Pipelined SRAM with QDR(TM)Architecture 9-Mbit Burst of 4 Pipelined SRAM with QDR垄芒 Architecture 9-Mbit Burst of 4 Pipelined SRAM with QDR Architecture 9-Mbit Burst of 4 Pipelined SRAM with QDR?/a> Architecture
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Cypress Semiconductor
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